Ellipsometry measurements are ideal for thin film and multilayer characterization.
Generalized ellipsometry collects six values compared to the standard two (Ψ, ∆). This additional information completely characterizes the cross- polarization of anisotropic samples.
The light source has low power density: applicable on in vivo tissues.
Ellipsometry can measure:
Wavelength range: 210 – 1690 nm.
Nr of wavelengths: 1065.
Incident angles: 45° – 90°.
Measure complete spectrum in 1/3 of a second.
Spot size: 120 μm.
Sample scan: up to 200 mm (8 inch).
Display applications: measurements of a-Si, poly-Si, microcrystalline-Si, OLED layers, color filters, ITO, MgO, polyimide, and liquid crystals are beneficial during display R&D and production.
PRECISION AND ACCURACY
Intensity: both reflectance and transmittance, including anisotropic terms such as like and cross-polarized intensities.
Spectroscopic ellipsometry (SE) measures changes in the reflectance and phase difference between the parallel (Rp) and perpendicular (Rs) components of a polarized light beam upon direct reflection from a surface of liquid or solid sample.
Reflectance (p, s) is described by the main ellipsometric angles Y and D. Because ellipsometry measures the ratio of two values originated by the same signal, the data collected are highly accurate (e.g., can detected thickness down to Å resolution), and reproducible. Most importantly, no reference specimen is necessary; the measurements are independent from the light source intensity and mechanical vibrations.